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Low-temperature anomalies of the photomagnetic effect in p-Hg~1~-~xCd~xTe [3890-43]
Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE [3890-28]
New pyroactive structures for infrared optoelectronics [3890-09]
Thermodiffusion in Si-X-Ge~3~3As~1~2Se~5~5 (X:Sb,Bi) interface [3890-82]
Photosensitization of Cd~xHg~1~-~xTe epitaxial films by laser-induced shock wave [3890-71]
Polycrystallinity to epitaxy: AFM study of CdTe hydrothermal electrodeposition [3890-69]
Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave [3890-68]
Radiation defect band in Pb~1~-~xSn~xSe(x0.03) alloys irradiated with electrons [3890-54]
Infrared absorption and dielectric properties of Li-Cu ferrite [3890-47]
Charge impurity states of In, Ga, Ge in narrow-gap PbTe [3890-26]
Currents in Hg~1~-~xCd~xTe photodiodes [3890-22]
New film materials for optoelectronics based on CdAl(Ga)~2S(Se)~4 compounds [3890-20]
Optical properties of Hg~1~-~xCd~xTe/CdTe epitaxial films with graded band gap [3890-13]
SP Technologies Ltd: composite material design engineers
Precipitation mechanism of GaAs~1~-~xP~x/GaAs in the isothermal CVD method [3890-78]
Effect of laser irradiation on photoconductivity of GaAs crystals [3890-72]
Impurity profile determination by the optimal parameter choice method [3890-44]
Interference IR filters on CdSb monocrystal substrates [3890-17]
Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]
High-quality lead telluride films grown on silicon with buffer porous silicon layers [3890-79]
Electronic properties and energy spectrum of SnTe doped with In [3890-58]
Silicon p-i-n photodiode with low values of dark current [3890-19]
Interaction of I-YI group semiconductors with metals [3890-77]
Thermal stress minimization in optical components coated with Ge-As-Se films [3890-60]
Phase transitions and transport properties in SnTe crystals and thin films [3890-57]
Galvanomagnetic and optical properties of CdTe wafers for substrates [3890-37]
Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films [3890-34]
Photoresponse in nonuniform semiconductor junctions under infrared laser excitation [3890-21]
Group-theory approach within the framework of the tight-binding model [3890-46]
Photoelectric properties of polycrystalline layers based on halogen-doped PbTe [3890-39]
Photoelectric and kinetic properties of PbTe(Ga) films [3890-35]
Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy [3890-01]