1–17 of 17 hits
|

    Noise and distortion properties of widely-tunable sampled-grating DBR lasers

    Shi, H.X. / Cohen, D.A. / Barton, J. et al. | IEEE | 2002
    Summary form only given. The intensity noise, intermodulation distortion and dynamic range characteristics of sampled-grating DBR lasers ...
    Publisher: IEEE

    Advances in vertical-cavity and widely-tunable lasers using InP-based PIC technology

    Coldren, L.A. | IEEE | 2002
    in both cases. The first example is a lattice-matched vertical-cavity surface-emitting laser (VCSEL) that can be created to operate at any ...
    Publisher: IEEE

    Improved ridge lasers utilizing laterally-intermixed active regions

    Getty, J.T. / Skogen, E.J. / Coldren, L.A. | IEEE | 2004
    The submicron abruptness of an intermixing transition is used to create current and carrier confinement in a ridge laser. Compared to a ...
    Publisher: IEEE

    Thermal impedance measurements in vertical-cavity lasers

    Wipiejewski, T. / Young, D.B. / Coldren, L.A. et al. | IEEE | 1996
    constant of the thermal chirp for laser elements is in the order of a few microseconds and increases with device diameter. The varying device ...
    Publisher: IEEE

    A monolithic chemical sensor using tandem heterodyned sampled grating DBR lasers

    Cohen, D.A. / Skogen, E. / Nolde, J. et al. | IEEE | 2001
    Summary form only given. The sensor consists of a pair of frequency-tunable diode lasers, an optical field combiner, and an integrated high ...
    Publisher: IEEE

    Tunable buried ridge stripe sampled grating distributed Bragg reflector lasers utilizing quantum well intermixing

    Skogen, E.J. / Barton, J. / DenBaars, S.P. et al. | IEEE | 2001
    waveguide. In this way the modal gain is increased, improving the characteristics of the laser. In order to create a non-absorbing waveguide, QWI ...
    Publisher: IEEE

    Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions

    Floyd, P.D. / Thibeault, B.J. / Ko, J. et al. | IEEE | 1996
    InGaAs DBR QW vertical cavity lasers (VCLs). The performance of IID-VCLs has been compared to air-gap apertured VCLs fabricated from adjacent ...
    Publisher: IEEE

    Chirp-controlled tandem electroabsorption modulator integrated with an SOA and a sampled-grating DBR laser

    Johansson, L.A. / Akulova, Y.A. / Fish, G.A. et al. | IEEE | 2003
    modulator arranged in a tandem configuration, both integrated with an SOA and a sampled-grating DBR laser. ...
    Publisher: IEEE

    2.5 Gb/sec wavelength conversion using monolithically-integrated photodetector and directly modulated widely-tunable SGDBR laser

    Hutchinson, J.M. / Henness, J.A. / Johansson, L.A. et al. | IEEE | 2003
    tuning range of 20 nm and allows signal monitoring. Error free operation at 2.5 Gb/s with an nonreturn-to-zero (NRZ) 2/sup 31/-1 PRBS is ...
    Publisher: IEEE

    Monolithic integration of an array of multiple-wavelength vertical-cavity lasers with a refractive microlens for optical interconnections

    Strzelecka, E.M. / Wipiejewski, T. / Ko, J. et al. | IEEE | 1996
    Vertical-cavity surface-emitting lasers (VCSELs) are very promising for data transmission in fiber links and free-space optical ...
    Publisher: IEEE

    Photocurrent driven widely-tunable wavelength converter based on a directly modulated bipolar cascade SGDBR laser

    Klamkin, J. / Johansson, L.A. / Getty, J.T. et al. | IEEE | 2004
    A monolithically integrated tunable wavelength converter based on a bipolar cascade SGDBR laser is presented. Enhanced conversion ...
    Publisher: IEEE

    A diode laser chemical sensor utilizing an oxidized lower cladding layer for high sensitivity

    Wang, C.S. / Cohen, D.A. / Nolde, J.A. et al. | IEEE | 2003
    . Analyte overlap of 4.8% is obtained with a tightly confined mode, ideal for sensitive affinity assays. ...
    Publisher: IEEE

    Characterization of the chirp properties of a monolithically-integrated widely-tunable all-optical wavelength converter (TAO-WC)

    Masanovic, M.L. / Lal, V. / Johansson, L.A. et al. | IEEE | 2003
    chirp parameter was measured to be -2 in non-inverting and 1-3 in inverting mode of operation for 40 nm input -22 nm output wavelength range. ...
    Publisher: IEEE

    Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region

    Wang, S. / Hurst, J.B. / Ma, F. et al. | IEEE | 2002
    We report the direct growth of impact-ionization engineering (I/sub 2/E) structures using InAlAs and InAlGaAs quaternary in the ...
    Publisher: IEEE

    Vertical cavity semiconductor optical amplifiers: comparison of Fabry-Perot and rate equations approaches

    Royo, P. / Koda, R. / Coldren, L.A. | IEEE | 2001
    We demonstrate that the Fabry-Perot and the rate equation methods used in semiconductor optical amplifiers modeling are strictly equivalent ...
    Publisher: IEEE

    InP-based active photonic integrated circuits

    Barton, J.S. / Dummer, M. / Tauke-Pedretti, A. et al. | IEEE | 2004
    This talk will outline a number of state-of-the-art photonic integrated circuits including photocurrent-driven wavelength converters ...
    Publisher: IEEE

    InP-based 1310-1550 nm lattice-matched VCSELs

    Buell, D.A. / Huntington, A.S. / Koda, R. et al. | IEEE | 2001
    system were overcome by the use of AsSb-based alloys for DBRs and multiple active regions to combat low gain materials. The inclusion of InP ...
    Publisher: IEEE