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Infrarotdetektor
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Optimizing indium aluminum antimonide LEDs and photodiodes for gas sensing applications [5564-15]
Fundamental physics and practical realization of mid-infrared photodetectors [5564-14]
MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates [5564-26]
Large-format IRFPA development on silicon (Invited Paper) [5564-05]
Au-doped HgCdTe for infrared detectors and focal plane arrays [4454-17]
Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy [4454-36]
Noise reduction in BIB-type detectors [4454-27]
Single-element PV and PC detectors for medical applications [4454-28]
Nonadiabatic transient behavior of quantum well photodetectors [4454-13]
High-operating-temperature (HOT) detector requirements (Invited Paper) [4454-21]
Space applications for HgCdTe at FIR wavelengths between 50 and 150 mum (Invited Paper) [4454-02]
Hg~1~-~xCd~xTe(112) nucleation on silicon composite substrates (Invited Paper) [4454-09]