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Optoelektronik
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Threshold characteristics of p-Si-PtSi barriers with highly doped surface nanolayer [5065-15]
Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe [4355-04]
Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method [4355-24]
Electron-positron annihilation in the narrow-gap semiconductor Hg~1~-~xCd~xTe [4355-25]
Investigation of MIS structures on Mn~xHg~1~-~xTe [3182-15]
Carrier lifetime in Hg~1~-~xCd~xTe grown by molecular beam epitaxy