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Material dispersion in (As~2S~3)~x(AsI~3)~1~-~x glasses [3890-80]
Dielectric function of nonlinear metal composite with double-layer ellipsoidal inclusions [3890-62]
High-quality lead telluride films grown on silicon with buffer porous silicon layers [3890-79]
Electronic properties and energy spectrum of SnTe doped with In [3890-58]
Silicon p-i-n photodiode with low values of dark current [3890-19]
Interaction of I-YI group semiconductors with metals [3890-77]
Thermal stress minimization in optical components coated with Ge-As-Se films [3890-60]
Phase transitions and transport properties in SnTe crystals and thin films [3890-57]
Galvanomagnetic and optical properties of CdTe wafers for substrates [3890-37]
Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films [3890-34]
Photoresponse in nonuniform semiconductor junctions under infrared laser excitation [3890-21]
Precipitation mechanism of GaAs~1~-~xP~x/GaAs in the isothermal CVD method [3890-78]
Effect of laser irradiation on photoconductivity of GaAs crystals [3890-72]