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Infrarotdetektor
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HgCdTe for far-infrared heterodyne detection [5209-09]
High-operability SWIR HgCdTe focal plane arrays [5209-03]
Hg~1~-~xCd~xTe(112) nucleation on silicon composite substrates (Invited Paper) [4454-09]
High-operating-temperature (HOT) detector requirements (Invited Paper) [4454-21]
Space applications for HgCdTe at FIR wavelengths between 50 and 150 mum (Invited Paper) [4454-02]
Two-color HgCdTe infrared staring focal plane arrays (Invited Paper) [5209-01]
Automatic recording system of dynamic spectral response and its applications [5209-21]
Monolithically integrated HgCdTe focal plane arrays [5209-02]
Thermal infrared characterization of ground targets and backgrounds
Dislocations in HgCdTe (111)B films [4795-14]
Fourth International Conference on Advanced Infrared Detectors and Systems, 5-7 June 1990
HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching [4795-25]
Intermixing effect on asymmetric quantum well [4795-06]
Influence of photoresist feature geometry on ECR plasma-etched HgCdTe frenches [4795-23]
Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures [4795-37]