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Charge impurity states of In, Ga, Ge in narrow-gap PbTe [3890-26]
Currents in Hg~1~-~xCd~xTe photodiodes [3890-22]
New film materials for optoelectronics based on CdAl(Ga)~2S(Se)~4 compounds [3890-20]
Optical properties of Hg~1~-~xCd~xTe/CdTe epitaxial films with graded band gap [3890-13]
Study on Failure of Pipeline due to Pressure Surge Effect
Radiation properties of zinc diphosphide and their influence on infrared absorption [3890-88]
New optical materials for an infrared technique based on cadmium telluride [3890-67]
Influence of semiconductor structure inhomogeneity on electrophysical measurement results [3890-53]
Absorption of far-infrared radiation by metal-dielectric composites [3890-25]
Recombination current for p-i-n junctions based on compensated semiconductor materials [3890-23]
Planar waveguide phase matching for backward parametric oscillation [3890-07]
Trial production and strength assessment of titanium alloy connecting rods