Synonyms were used for: Lasers Society;
Search without synonyms: title: IEEE; Lasers and Electro-Optics Society; LEOS '99

1–11 of 11 hits
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    Carrier transport and injection efficiency of InGaAsN quantum-well lasers

    Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004
    InGaAsN lasers with asymmetrically placed active region were fabricated and characterized. By moving the QW closer to p-cladding layer ...
    Publisher: IEEE

    Temperature sensitivity of 1360 nm InGaAsN quantum well lasers

    Jeng-Ya Yeh, / Tansu, N. / Mawst, L.J. | IEEE | 2003
    injection efficiency and material gain parameter. The current injection efficiency of InGaAsN QW lasers with increasing N-content exhibits ...
    Publisher: IEEE

    The 3 dB bandwidth of strain-compensated dilute-nitride quantum-well lasers

    Anton, O. / Menoni, C.S. / Jeng-Ya Yeh, et al. | IEEE | 2004
    Above threshold frequency response measurements carried out on strain-compensated InGaAs and InGaAsN lasers with similar separate ...
    Publisher: IEEE

    GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate

    Tansu, N. / Mawst, L.J. / Vurgaftman, I. et al. | IEEE | 2003
    This paper presents GaAsSb-GaAsN and GaAsSb-InGaAsN type-II QW structures on GaAs substrate as laser materials that would achieve emission ...
    Publisher: IEEE

    High power, efficient Al-free InGaAs/InGaP/GaAs diode lasers

    Mawst, L.J. | IEEE | 1996
    found to be similar to those for InGaAs/A1GaAs facet-coated lasers, indicating that the quantum-well material (i.e. strained-layer InGaAs), and ...
    Publisher: IEEE

    Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (/spl lambda/>1.17 /spl mu/m) quantum well lasers

    Tansu, N. / Ying-Lan Chang, / Takeuchi, T. et al. | IEEE | 2001
    lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very ...
    Publisher: IEEE

    Modal properties of 2D anti-guided vertical cavity surface emitting laser arrays

    Ling Bao, / Nam Heon Kim, / Elkin, N.N. et al. | IEEE | 2004
    The paper focuses on the detailed modal property analysis of anti-guided VCSEL arrays and the application of an analytical approximation to ...
    Publisher: IEEE

    Coherent emission from large aperture antiguided vertical cavity surface emitting laser arrays

    Bao, L. / Kim, N.H. / Elkin, N.N. et al. | IEEE | 2003
    The in-phase mode emission in coupled VCSELs and 2D 4/spl times/4 VCSEL arrays has been reported using antiguided VCSEL elements. Two-step ...
    Publisher: IEEE

    Antiguided VCSELs and VCSEL phase-locked arrays

    Mawst, L.J. | IEEE | 2001
    the last few years. Antiguides have demonstrated high-power, single-mode operation, from edge-emitting lasers and, more recently, have been ...
    Publisher: IEEE

    Distributed-feedback grating used as a lateral spatial-mode selector in phase-locked antiguided arrays

    Nesnidal, M.P. / Mawst, L.J. / Botez, D. et al. | IEEE | 1996
    antiguided arrays. The analysis includes the effects of facet coatings and accounts for the random nature of the cleave location. ...
    Publisher: IEEE

    Large spot-size narrow waveguide VCSEL

    Delai Zhou, / Tae-Woo Lee, / Tansu, N. et al. | IEEE | 2001
    To obtain a large near-field spot-size (i.e. narrow far-field FWHM), a narrow waveguide design is utilized in edge-emitting lasers to ...
    Publisher: IEEE