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Infrarotdetektor
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Design and development of multicolor detector arrays [5564-04]
MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates [5564-26]
HgCdTe for far-infrared heterodyne detection [5209-09]
Monolithically integrated HgCdTe focal plane arrays [5209-02]
Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy [5209-06]
Superlattices for very long wavelength infrared detectors [5209-08]
Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates [4795-02]
Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy [4795-03]
Progress in far-infrared detection technology [4795-21]
MBE growth of HgCdTe HOT detector heterostructures [4795-16]
High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE [4454-22]
Materials and designs for high-temperature infrared photon detectors (Invited Paper) [3794-10]
Optimization of the MBE growth of Hg~1~-~xCd~xTe for advanced infrared applications [3379-62]
Recent progress in the doping of MBE HgCdTe (Invited Paper) [2554-07]
Infrared Detectivities of 11 to 17 m Ideal InAs/In~xGa~1~-~xSb Superlattices
Carrier Recombination in Narrow Gap InAs/In~xGa~1~-~xSb Superlattices