The development of highly accurate and durable control systems is becoming a must for todays high performance automobiles. For example, it is necessary to upgrade materials and methods to create more sensitive sensors, higher speed processors and more accurate actuators. Thus, the development of a CMOS time-to-digital converter LSI with half-nanosecond resolution, which controls only pulse signals was achieved by employing 1.5 mu m CMOS technology, The new signal detecting circuit, 1.1 mm2 in size, converts time to numerical values over a wide measurement range (13 bits). The compact digital circuit employs a newly developed "ring gate delay system". Within the LSI the fully digital circuit is highly durable. This allows it to be utilized even under severe conditions (for example an operating ambient temperature of 130 degrees C). In order to measure time accurately, a method of correcting the variation of measurement time data employing a real-time conversion fully digital circuit is described. This method allows for fully automatic correction with a microcomputer, so no manual adjustment is required. In addition to sensor circuit applications, the LSI has great potential for an application specific integrated circuit, (ASIC) such as a function cell, which is a completely new method of measuring time.


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    Title :

    A CMOS time-to-digital converter LSI with half-nanosecond resolution using a ring gate delay line


    Additional title:

    Eine CMOS-LSI-Schaltung zur Digitalisierung von Zeiteinheiten mit einer Auflösung von einer halben Nanosekunde auf Basis einer Ring-Gate-Verzögerungsleitung


    Contributors:
    Watanabe, T. (author) / Makino, Y. (author) / Ohtsuka, U. (author) / Akita, S. (author) / Hattori, T. (author)

    Published in:

    IEICE Transactions on Electronics ; E76-C , 12 ; 1774-1779


    Publication date :

    1993


    Size :

    6 Seiten, 2 Quellen



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




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