Silicon detectors are able to perform radiation monitoring and spectroscopy at moderate ambient conditions. Because of the low capacitive readout anodes, noise levels below 5 electrons at 150 K, and around 10 electrons at 300 K are obtainable. The detector leakage current adds in addition to this intrinsic on-chip amplifier noise at room temperature a shaping time dependent component. The float zone n-type (111) material is of very high quality allowing for high minority carrier lifetime, complete charge collection, low noise on-chip amplifiers and a high tolerance with respect to ionizing radiation. Silicon strip detectors have been developed for fast tracking applications in two dimensions. Fully depleted pn-CCDs have shown an excellent performance for spatially resolved spectroscopy in a single photon counting mode. A multi purpose SDC (silicon drift detector) is operated for fast spectroscopic applications for synchrotron light user, for X-ray fluorescent applications, for dosimetry and as low noise photodiode for optical and calorimetric applications. For many detector applications in science and industry, FZ silicon turned out to fulfill most of the needs.


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    Title :

    High resolution silicon detectors on high resistivity silicon


    Additional title:

    Hochauflösende Siliciumdetektoren auf Silicium mit hohem Widerstand


    Contributors:
    Stüder, L. (author)


    Publication date :

    1996


    Size :

    15 Seiten, 8 Bilder, 19 Quellen




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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