High efficiency gallium arsenide cells, made at Spectrolab by the liquid epitaxy method (LPE) have been irradiated with 1 MeV electrons up to fluences of 1016 e/cm2. Extensive measurements have been made of cell spectral response, dark and light excited current-voltage characteristics and analysed using computer based models to determine underlying parameters such as damage coefficients. In particular it is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to those of Mitsubishi and of Hughes Research Laboratories for emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found by Kachare and Anspaugh for proton irradiated LPE cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.


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    Title :

    Radiation damage of gallium aresenide production cells


    Additional title:

    Strahlungsschaedigung von Galliumarsenid-Sonnenzellen aus der Produktion


    Contributors:


    Publication date :

    1987


    Size :

    4 Seiten, 6 Bilder, 2 Tabellen, 7 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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