A power switching device is one of the key elements to determine the performance of hybrid electric vehicles (HEVs) and pure electric vehicles (EVs). Recently, the power devices using wide-bandgap semiconductors, such as SiC and GaN, have been intensively developed for the future HEVs and EVs. In this paper, we review a role of the power devices in these automotive systems, the required device characteristics, and the recent status of SiC and GaN power devices.


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    Title :

    Advanced SiC and GaN power electronics for automotive systems


    Contributors:
    Kanechika, M. (author) / Uesugi, T. (author) / Kachi, T. (author)


    Publication date :

    2010


    Size :

    4 Seiten, 13 Quellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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