Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.


    Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    A 55-kW three-phase inverter with Si IGBTs and SiC Schottky diodes


    Contributors:

    Published in:

    Publication date :

    2009


    Size :

    8 Seiten, 18 Quellen




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




    Investigation of parallel connection of 1700V IGBTs in 400kW inverter

    Chen Huawei, / Liu Jun, / Zhang Jian, et al. | IEEE | 2014


    Car ignition with IGBTs

    Melito,M. / SGS Thomson Microelectronica,IT | Automotive engineering | 1992


    Extreme operation of IGBTs

    Yanjun Feng, / Tianjiao Liu, / Daniyal, Zaki Ahmad et al. | IEEE | 2017


    Progress in the Development of NPT-IGBTs and Diodes for Blocking Voltages >1000 V

    Porst, A. / Bruckmann, M. / Brunner, H. et al. | British Library Online Contents | 1997


    Titelstory: IGBTs und Antriebssteuerung

    British Library Online Contents | 2010