This paper presents a review of recent results of silicon carbide (SiC) piezoresistive pressure transducers that have been demonstrated to operate up to 600 deg C. The results offer promise to extend pressure measurement to higher temperatures beyond the capability of conventional semiconductor pressure transducers. The development also provides three immediate significant technological benefits: i) wider frequency bandwidth (overcomes acoustic attenuation associated with pitot tubes), ii) accuracy (improved stable output at high temperature), and iii) reduced packaging complexity (no package cooling required). Operation at 600 deg C provides immediate applications in military and commercial jet engines in which critical static and dynamic pressure measurements are performed to improve engine performance (i.e., reduced emission and combustor instabilities) and improved CFD code validation. The pressure sensor is packaged by a novel MEMS direct chip attach (MEMS-DCA) technique that eliminates the need for wire bonding, thereby removing some reliability issues encountered at high temperature. Generally, at 600 deg C the full-scale output (FSO) of these transducers drops by about 50-65 % of the room temperature values, which can be compensated for with external signal conditioning circuitry.


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    Title :

    Stable 600 deg C silicon carbide MEMS pressure transducers


    Contributors:


    Publication date :

    2007


    Size :

    11 Seiten, 15 Quellen





    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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