A silicon wafer will be etched electrochemically up to a depth of 500 micron to generate meso-porous silicon volumes with a bulk silicon border. After dicing the porous elements these will be filled with a stable oxidant. On the back side of such pyrochips a thin film resistor is placed (figure 2). The ignition of the nanometer scaled silicon/oxidant mixture can be generated through a defined current pulse to the thin film resistor. Because of the very large specific surface within the porous silicon the ignition causes a strong exothermic reaction between the silicon and the oxidant atoms . The specific energy yield of this innovative explosive material can be many times above that of conventional TNT. The explosive power is adjustable through the pyrochip geometry and the oxidant used.


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    Title :

    Explosive devices based on meso-porous silicon with integrated ignition resistor


    Additional title:

    Explosivkörper basierend auf meso-porösem Silizium mit integriertem Zündwiderstand


    Contributors:


    Publication date :

    2007


    Size :

    3 Seiten, 3 Bilder, 1 Tabelle, 6 Quellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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