The oxidation of silicon, polycrystalline silicon carbide, and LPCVD silicon nitride in dissociated oxygen and N2O environments at approximately 900 deg C has been investigated. Oxidation in dissociated environments is significantly increased over oxidation in molecular environments. Deal-Grove parabolic (B) and linear (B/A) rate constants are determined for the oxidation of each material. For the times and conditions of these experiments all oxidations were diffusion rate limited, as defined by the Deal-Grove criterion t >> A2/(4B). The parabolic rate constants for SiC, Si3N4, and Si were 4180 Angström2/min, 4151 Angström2/min, and 3054 Angström2/min, respectively.


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    Title :

    The effect of dissociated oxygen on the oxidation of Si, polycrystalline SiC and LPCVD Si3N4


    Contributors:
    Rogers, B.R. (author) / Song, Z. (author) / Marschall, J. (author) / Queralto, N. (author) / Zorman, C.A. (author)


    Publication date :

    2004


    Size :

    11 Seiten, 4 Bilder, 3 Tabellen, 19 Quellen




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English