The oxidation of silicon, polycrystalline silicon carbide, and LPCVD silicon nitride in dissociated oxygen and N2O environments at approximately 900 deg C has been investigated. Oxidation in dissociated environments is significantly increased over oxidation in molecular environments. Deal-Grove parabolic (B) and linear (B/A) rate constants are determined for the oxidation of each material. For the times and conditions of these experiments all oxidations were diffusion rate limited, as defined by the Deal-Grove criterion t >> A2/(4B). The parabolic rate constants for SiC, Si3N4, and Si were 4180 Angström2/min, 4151 Angström2/min, and 3054 Angström2/min, respectively.
The effect of dissociated oxygen on the oxidation of Si, polycrystalline SiC and LPCVD Si3N4
Meeting of the Electrochemical Society, 206, High Temperature Corrosion and Materials Chemistry, 5 ; 268-278
2004
11 Seiten, 4 Bilder, 3 Tabellen, 19 Quellen
Conference paper
English