Linearity has become a driving requirement for wireless application, especially with the push toward more efficient bandwidth usage and more complex modulation formats. Discrete devices, such as the MMA709 heterojunction-bipolar transistor (HBT) provide the clean performance sought by amplifier designers, while also offering the flexibility of a discrete transistor. The HBT can achieve output levels to +33 dBm (2 W) over moderate bandwidths within the 100-2400 MHz range. The indium-gallium-phosphide (InGaP) HBT based discrete devices are used for commercial and military amplifier applications.


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    Title :

    HBT devices deliver gain/linearity to 2.4 GHz


    Contributors:
    Sahjani, P. (author)

    Published in:

    Microwaves & RF ; 43 , 10 ; 96-98


    Publication date :

    2004


    Size :

    3 Seiten



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




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