Recent developments in SOI (Silicon-On-Insulator) technology based on direct wafer bonding constitute an attractive alternative to the traditional PN junction isolation employed in conventional bulk silicon ICs. This structure offers benefits such as a low parasitic effect on components, high-temperature operation and the reduced size of high-voltage components. SOI devices have been developed for many applications, such as intelligent power ICs, high-voltage ICs, and mixed-signal ICs. SOI devices dielectrically isolated using trenches have complete and narrow isolation. The intelligent power IC is a typical application of an SOI device dielectrically isolated using trenches. The SOI Intelligent power IC has been developed which is an integration of DMOS transistors, CMOS transistors, bipolar transistors with high breakdown voltage and thin-film resistors. SOI Intelligent power ICs are used in a variety of electronic parts in automobiles, including ECUs for various functions, and smart actuators.


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    Title :

    SOI intelligent power IC technology for automotive electronics


    Additional title:

    SOI, intelligente Leistungs-IC-Technologie für die Fahrzeugelektronik


    Contributors:
    Iida, M. (author) / Fujimoto, H. (author) / Abe, H. (author) / Ban, H. (author) / Mizuno, S. (author) / Okura, K. (author)


    Publication date :

    2002


    Size :

    7 Seiten, 8 Bilder, 9 Quellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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