The effect of additional indium on copper indium gallium selenide (CIGS) thin films and solar cells was investigated with respect to potassium fluoride post‐deposition treatment (KF‐PDT) using current‐voltage, external quantum efficiency, scanning electron microscopy, X‐ray photoelectron spectroscopy, time‐resolved photoluminescence and capacitance‐voltage measurements. The cell performance, particularly open‐circuit voltage ( V oc ) improved drastically by the combined treatments of additional indium deposition after CIGS growth and subsequent KF‐PDT. A Cu deficient layer at the CIGS surface increased after both treatments rather than only KF‐PDT. Photoluminescence intensity, lifetime and net carrier concentration of KF‐untreated CIGS solar cells did not change significantly by only additional indium deposition. However, they improved because of the combined treatments. Copyright © 2017 John Wiley & Sons, Ltd. Combined effects of additional indium and potassium fluoride post‐deposition treatment were found much effective to improve the performance of the solar cell. The cell performance particularly open‐circuit voltage ( V oc ) improved drastically, which is due to the formation of much Cu‐depleted layer at the surface region as confirmed from X‐ray photoelectron spectroscopy.
Effects of combined additional indium deposition and potassium fluoride post‐deposition treatments on Cu(In,Ga)Se2 thin film solar cells
Progress in photovoltaics ; 25 , 10
2017
Article (Journal)
English
additional indium deposition , XPS , Gallium , Deposition , Copper , Electric potential , Fluorides , Photoelectron spectroscopy , KF‐PDT , C‐V , Quantum efficiency , Potassium fluoride , TRPL , Carrier density , Cu(In,Ga)Se , Potassium , Photovoltaic cells , Solar cells , Copper indium gallium selenides , Photoluminescence , thin film solar cell , Thin films
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
Bentham Science Publishers | 2014
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