Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique is presented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The best conditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among a wide range of possibilities. Solar cells with an excellent quantum efficiency have been obtained, with a sub‐bandgap photo‐response of 0.07 mA/cm 2 per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potential of this technology to be able to increase the efficiency of lattice‐matched multi‐junction solar cells and contributing to a better understanding of QD technology toward the achievement of practical intermediate‐band solar cells. Copyright © 2016 John Wiley & Sons, Ltd. Quantum dots (QDs) and solar cells with QD arrays made by metalorganic vapor phase epitaxy have been thoroughly researched. High‐speed overall growth is considered for cost effectiveness, and slower speed is used to grow the QDs and caplayers only. Highest photoluminescence has been researched; solar cells have been made and characterized. Highest quantum efficiency has been obtained in the host sub‐bandgap region per QD layer.


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    Title :

    Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology



    Published in:

    Publication date :

    2016




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher



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