Cu(In,Ga)Se 2 (CIGS) films on soda‐lime glass and stainless steel (SUS) substrates with several [Ga]/([Ga] + [In]), GGI, and Fe concentrations are fabricated by so‐called “multi‐layer precursor method”. From optical deep‐level transient spectroscopy, deep‐level defect located at 0.8 eV from valence band maximum ( E V ) is observed. This defect becomes recombination center when GGI is over 0.4, thereby decreasing cell performances. Fe‐related deep‐level defect is moreover detected in CIGS film on SUS substrate situated at 0.45 eV from E V . Its density is consistent with Fe concentration in CIGS films. According to SCAPS simulation and experimental results, Fe concentration of above threshold (1.0 × 10 16 atom/cm 3 ) decreases carrier lifetime and carrier density and has more harmful influence on cell performances with GGI of above 0.4. On the other hand, Fe concentration of below threshold (1.0 × 10 16 atom/cm 3 ) has no detrimental impact on cell performances. Namely, conversion efficiency ( η ) is slightly changed by below 2%. CIGS solar cell on SUS substrate with η of 17.5% is fabricated by decreasing Fe concentration to approximately 5.2 × 10 16 atom/cm 3 although higher than the threshold value. Copyright © 2016 John Wiley & Sons, Ltd. Cu(In,Ga)Se 2 (CIGS) films on flexible stainless steel substrate are fabricated by so‐called “multi‐layer precursor method.” The impact of Fe concentration, which leads to the formation of deep‐level defect in the CIGS films, on cell performances is investigated by both simulation and experimental results. Ultimately, CIGS solar cell on flexible stainless steel substrate with conversion efficiency of 17.5% is fabricated by decreasing Fe concentration to approximately 5.2 × 101 6 atom/cm 3 .
Flexible Cu(In,Ga)Se2 solar cell on stainless steel substrate deposited by multi‐layer precursor method: its photovoltaic performance and deep‐level defects
Progress in photovoltaics ; 24 , 7
2016
Article (Journal)
English
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
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