We present a back‐contact silicon heterojunction system for liquid‐phase crystallized absorbers on glass. For structuring interdigitating p‐type and n‐type contact areas, etch selectivity of alkaline solutions for n‐doped and p‐doped amorphous Si was used. The cells feature Al or ITO /Ag electrodes. Electrical and optical properties were compared. Including an a priori conducted KOH texture, a j SC value of 30  mA /cm 2 with ITO /Ag compared with 24  mA /cm 2 for planar Al could be achieved, while V OC over 600  mV are feasible with both. We present an interdigitated back‐contact silicon heterojunction system designed for liquid‐phase crystallized thin‐film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a‐Si:H(p)) and absorber (a‐Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a‐Si:H(n) and a‐Si:H(p) in 0.6% NaOH were determined and interdigitated back‐contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO /Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short‐circuit current density ( j SC ) of up to 30.3  mA /cm 2 using the ITO /Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high j SC , as well as V OC values of 633 mV and pseudo‐fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd.


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    Title :

    Interdigitated back‐contact heterojunction solar cell concept for liquid phase crystallized thin‐film silicon on glass



    Published in:

    Publication date :

    2016




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher