We report on the open‐circuit voltage recovery in GaSb quantum ring (QR) solar cells under high solar concentration up to 2500 suns. The detailed behaviour of type II GaSb/GaAs QR solar cells under solar concentration, using different temperatures and light illumination conditions, is analysed through optical and electrical measurements. Although enhancement of the short‐circuit current was observed because of sub‐bandgap photon absorption in the QR, the thermionic emission rate of holes was found to be insufficient for ideal operation. The direct excitation of electron–hole pairs into QRs has revealed that the accumulation of holes is one of the causes of the open‐circuit voltage ( V OC ) degradation. However, using concentrated light up to 2500 suns, the GaSb QR cell showed much quicker V OC recovery rate than a GaAs control cell. Copyright © 2015 John Wiley & Sons, Ltd. In this paper, we report type II GaSb/GaAs quantum ring (QR) solar cells. A short‐circuit current enhancement of 5.9% was achieved by the extended infrared absorption beyond GaAs, accompanied by an open‐circuit voltage ( V OC ) degradation. By directly exciting electron–hole pairs into QRs, we have revealed that the hole accumulation within QRs is one of the causes of V OC degradation. Finally, we show a quick V OC recovery rate for QR solar cells under concentrated light.


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    Title :

    Open‐circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration



    Published in:

    Publication date :

    2015




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher