Research has shown that with proper choice of material, low-resistance contact pads deposited on solar cells and other devices by improved technique that does not involve sintering. Research directed at understanding mechanisms involved in contact-sintering process has resulted in identification of special group of materials that includes phosphides of gold, silver, and nickel; specifically, Au(2)P(3), AgP(2), and Ni(3)P. Incorporation of phosphide interlayer substantially reduces resistivity between gold current-carrying layer and indium phosphide substrate. Further research indicated only very thin interlayer of any of these compounds needed to obtain low contact resistance, without subjecting contact to destructive sintering process.


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    Title :

    Sinterless Fabrication Of Contact Pads On InP Devices


    Contributors:

    Published in:

    Publication date :

    1995-10-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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