The application of variable angle spectroscopic ellipsometry to the study of diffusion of atomic oxygen through SiO2 is presented. Data are found to be well fit to the universal growth parabola, and the diffusion coefficient is estimated to be 0.00001 sq cm/min.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Ellipsometric studies of the diffusion of automic oxygen through silicon dioxide thin films


    Contributors:

    Published in:

    Publication date :

    1990-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




    Ellipsometric studies of the diffusion of automic oxygen through silicon dioxide thin films

    MEYERS, GRANT G. / WOOLLAM, JOHN / GULINO, DANIEL A. et al. | AIAA | 1990




    Ellipsometric measurements for thin-film-based sensor systems [2509-10]

    Chitaree, R. / Murphy, V. / Weir, K. et al. | British Library Conference Proceedings | 1995


    Micro-ellipsometric true topography

    Liu, Y. A. / See, C. W. / Somekh, M. G. et al. | British Library Conference Proceedings | 1996