The studies that are described were aimed at reduction of the capacitance of IV-VI semiconductor photodiodes, with particular emphasis upon 3-5 micrometer devices that are suitable for lightweight thermal imaging systems. The starting point was the thin-film Pb barrier IV-VI photodiodes that were discovered and developed by Ford Research Staff.
Development of High-Speed IV-VI Photodiodes
1976
168 pages
Report
No indication
English
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