The carrier dynamics of an InGaN multiple-quantum-well (MQW) laser diode under the high current injection level is examined using time-resolved pump-probe measurements. Subpicosecond intersubband hole relaxation and hole heating processes are found to dominate carrier dynamics responses, different from GaAs and InP based laser diodes.


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    Title :

    Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels


    Contributors:


    Publication date :

    2004-01-01


    Size :

    121222 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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