The carrier dynamics of an InGaN multiple-quantum-well (MQW) laser diode under the high current injection level is examined using time-resolved pump-probe measurements. Subpicosecond intersubband hole relaxation and hole heating processes are found to dominate carrier dynamics responses, different from GaAs and InP based laser diodes.
Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels
2004-01-01
121222 byte
Conference paper
Electronic Resource
English
Femtosecond Carrier Dynamics in InGaN Multiple-Quantum-Well Laser Diodes under High Injection Levels
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