Measured threshold currents of tensile and compressively strained lasers show that differences between 637 nm devices are due chiefly to the internal mode loss and recombination current rather than gain saturation in thin compressively strained structures.
Tensile and compressive strain in GaInP lasers at 637 nm: the role of the sublinear gain-current relationship
1996-01-01
187893 byte
Conference paper
Electronic Resource
English
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