This paper reports, for the first time, InP-based thin film surface emitters bonded directly to digital silicon CMOS circuits operating at 155Mbps with digital I/O for application in a three dimensional, through-silicon, communication system. The digital CMOS driver circuitry consisted of a 2-stage tapered buffer, a current switch, and a constant bias current source. The current switch was used before the power transistor stage to avoid voltage spikes. The output stage included a current source to DC bias the LED for increased speed. Careful layout design of the power transistors was performed to minimize any series resistance and to improve the current carrying capability.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    An integrated 155 Mbps digital transmitter using a 1.3 /spl mu/m wavelength thin film LED


    Contributors:
    Bond, S.W. (author) / Lee, M. (author) / Chang, J.J. (author) / Vendier, O. (author) / Hou, Z. (author) / Brooke, M. (author) / Jokerst, N.M. (author) / Leavitt, R.P. (author)


    Publication date :

    1996-01-01


    Size :

    160074 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    An Integrated 155 Mbps Digital Transmitter Using a 1.3m Wavelength Thin Film LED

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    CMOS Optical Receiver with Integrated Compound Semiconductor Thin-Film Inverted MSM Detector Operating at 155 Mbps

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Implementation of a 622 MBPS OFDM Digital Modem

    Kifle, Muli / Bizon, Thomas / Nguyen, Nam et al. | AIAA | 2002


    156 Mbps ATM transmission experiment using N-STAR

    Yoshimura, Naoko / Takahashi, Takashi / Saifuddin, Ahmed et al. | AIAA | 1998