Recent achievements in GaN-based light-emitting diodes (LEDs), which is linked to the use of new designs, such as p/sup +/-AlGaN/GaN strained-layer superlattice (SLS) and n/sup +/-InGaN/GaN short-period superlattice (SPS) top contact layer is reported. GaN-based LEDs with low-operation voltages, which are as low as 3 V (at 20 mA ) even lower, can be achieved by the use of these heavy-doped layers. In addition, conventional transparent conductive oxide, such as indium tin oxide (ITO), can be served as a transparent top contact layer in GaN-based LEDs other than thin metal film such as Ni/Au. Luminescence intensity in visible GaN-based LEDs can be significantly improved by this new design due to the high-transparency top contact layer. In the recent achievements, white LEDs including a variety of designs, such as phosphor-containing and phosphor-less device structures, will also be reported. Specifically, the high-efficiency yellow-green (/spl lambda//spl sim/565 nm) LEDs based on InGaN/GaN MQW emitting layers, which the luminescence intensity is comparable with the conventional AlGaInP yellow-green (/spl lambda//spl sim/575 nm) LEDs is achieved. This high-efficiency InGaN/GaN yellow-green LED makes a single-chip complementary white LED possible.


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    Title :

    UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors


    Contributors:
    Su, Y.K. (author) / Sheu, J.K. (author)


    Publication date :

    2003-01-01


    Size :

    117502 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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