Sb surfactant suppresses three-dimensional growth of highly strained InGaAs wells on InP substrate. The emission wavelength exceeds 2.1 µm for a buried-heterostructure laser with an active region using InGaAs wells.
2.1-µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant
2005-01-01
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Conference paper
Electronic Resource
English
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