Sb surfactant suppresses three-dimensional growth of highly strained InGaAs wells on InP substrate. The emission wavelength exceeds 2.1 µm for a buried-heterostructure laser with an active region using InGaAs wells.


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    Title :

    2.1-µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant


    Contributors:
    Sato, T. (author) / Mitsuhara, M. (author) / Watanabe, T. (author) / Kasaya, K. (author) / Kondo, Y. (author)


    Publication date :

    2005-01-01


    Size :

    425621 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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