We have developed a novel process of transmission line type terahertz (THz) devices for biological sensing. A low-temperature-grown (LT) GaAs layer side is bonded onto silicon substrates using Au-Sn solder, then the GaAs substrate is removed by selective wet etching. Photoconductive switch elements for generating and detecting THz signals are fabricated on the transferred LT-GaAs layer. This process results in robust integrated devices against biological solutions. Sequential measurement of THz time domain spectroscopy is available for biological molecules such as DNA samples. We observe clear difference in delay time shifts according to change of quantity and the state of applied molecules.
Terahertz Integrated Transmission Line Sensors Using a Bonded Epitaxial GaAs Layer on Silicon Substrates
2006-09-01
1192819 byte
Conference paper
Electronic Resource
English
Epitaxial Liftoff of GaAs Detector onto Silicon Integrated Circuits
British Library Conference Proceedings | 1993
|Numerical Comparisons of Terahertz Radiation from GaAs and GaAs: As+ Substrates
British Library Online Contents | 2005
|GaAs 850nm Surface-normal Modulators Solder-bonded to Silicon
British Library Conference Proceedings | 1993
|Microwave GaAs Integrated Circuits On Quartz Substrates
NTRS | 1994
|