In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO/sub 2/) film were deposited onto a In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO/sub 2 /film, however the TiO/sub 2/ film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO/sub 2/.


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    Title :

    Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots


    Contributors:
    Fu, L. (author) / Lever, P. (author) / Tan, H.H. (author) / Jagadish, C. (author) / Reece, P. (author) / Gal, M. (author)


    Publication date :

    2002-01-01


    Size :

    232016 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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