A detectivity study is presented on an MBE- grown ZnS/sub 0.58/Se/sub 0.42/ UV photodiode system. The noise spectral density, impulse response time, bandwidth, responsivity, dark current at reverse bias up to 12 V and zero bias resistance were determined. A detectivity as high as 7.1/spl times/10/sup 14/ cmHz/sup 1/2/W/sup -1/ has been achieved. A set of devices with single-layer/double-layer anti-reflecting coatings (ARCs) of different thicknesses and compositions were fabricated. The results are in general in good agreement with the prediction from the theories.


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    Title :

    II-VI ultraviolet detectors: issues of detectivity and antireflection coatings


    Contributors:
    Lai, L.S. (author) / Guo, Z. (author) / Law, W.Y. (author) / Sou, I.K. (author) / Wong, G.K.L. (author)


    Publication date :

    2003-01-01


    Size :

    230267 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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