Summary form only given. We demonstrate light emitting diodes operating at 1.3 /spl mu/m, based on a novel type-II InGaAs/GaPAsSb quantum well (QW) structure. Photoluminescence has also been achieved at wavelengths up to 1.5 /spl mu/m in samples with different compositions of the GaPAsSb layer. Theoretical modeling using a two-band envelope function approximation has shown that such long wavelength emission results from a spatially indirect transition in the type-II QWs in which the electron and hole wave functions have a strong spatial overlap.


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    Title :

    1.3 /spl mu/m InGaAs/GaPAsSb light emitting diode grown on GaAs


    Contributors:
    Dowd, P. (author) / Braun, W. (author) / Ryu, C.M. (author) / Guo, C.-Z. (author) / Chen, S.L. (author) / Koelle, U. (author) / Johnson, S.R. (author) / Zhang, Y.-H. (author) / Smith, D.J. (author)


    Publication date :

    1999-01-01


    Size :

    369337 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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