We have shown that the cladding layer free-carrier absorption is the main source of internal loss in the studied InGaAsP/InP SCH-MQW laser structures. Very low internal loss (1.3 cm/sup -1/) and low threshold current density (260 A/cm/sup 2/ for a 2 mm cavity) are obtained with the broadened-waveguide laser structure. High efficiency lasers can be made using this structure.


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    Title :

    Very low internal loss, 1.5 /spl mu/m wavelength SCH-MQW InGaAsP/InP laser diodes with broadened-waveguides


    Contributors:
    Xu, L. (author) / Garbuzov, D. (author) / Forrest, S. (author) / Menna, R. (author) / Martinelli, R. (author) / Connolly, J. (author)


    Publication date :

    1996-01-01


    Size :

    136236 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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