An intersubband-transition (ISB-T) in a semiconductor quantum well (QW) has been drawing much attention due to its unique characteristics such as ultrafast energy relaxation time (/spl sim/1 ps) and large transition probability. In this paper, we report for the first time a picosecond range all-optical modulation by using a free electron laser (FEL) as the ISB-light. This has become possible by the attractive features ofthe FEL such as ultra-short pulse operation, wide tunability of the lasing wavelength, and high peak power keeping the average power low. The sample utilized for the experiment has a multiple quantum well structure with 30 periods of GaAs wells and Al/sub 0.3/Ga/sub 0.7/As barrier layers grown by molecular-beam epitaxy on a GaAs substrate, where the barrier layers were selectively n-doped with Si.


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    Title :

    Observation of ultrafast interband-light modulation by intersubband-light in n-doped quantum wells by using free electron laser


    Contributors:
    Mitsuyu, T. (author) / Suzuki, T. (author) / Nishi, K. (author) / Ohyama, H. (author) / Tomimasu, T. (author) / Noda, S. (author) / Asano, T. (author) / Sasaki, A. (author)


    Publication date :

    1996-01-01


    Size :

    158640 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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