We have developed light-emitting devices (LEDs) of monodispersed silicon (Si) nanocrystallite active regions synthesized by pulsed laser ablation in inert background gas (PLA-IBG). The light emission spectrum had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap, at room temperature.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Light-emitting properties of monodispersed silicon nanocrystallites synthesized by pulsed laser ablation in inert background gas


    Contributors:
    Yoshida, T. (author) / Makino, T. (author) / Suzuki, N. (author) / Yamada, Y. (author)


    Publication date :

    2001-01-01


    Size :

    155005 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Light-Emitting Properties of Monodispersed Silicon Nanocrystallites Synthesized by Pulsed Laser Ablation in Inert Background Gas

    Yoshida, T. / Makino, T. / Suzuki, N. et al. | British Library Conference Proceedings | 2001




    Electroluminescent diode with nanocrystalline Si active layer prepared by pulsed-laser ablation in inert gas (Invited Paper) [3550-61]

    Yoshida, T. / Yamada, Y. / Orii, T. et al. | British Library Conference Proceedings | 1998


    Nonlinear optical properties of CuCl nanocrystallites

    Hoenerlage, B. / Levy, R. / SPIE- The International Society of Optical Engineering | British Library Conference Proceedings | 1994