In summary, buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, are found to be superior in terms of oxidation isotropy, mechanical stability, and strain. It is not surprising that VCSELs using AlGaAs oxide layers as current apertures have shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers will be presented. The beneficial properties of oxides converted from AlGaAs alloys are found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.
Wet oxidation of AlGaAs vs. AlAs: A little gallium is good
1996-01-01
221417 byte
Conference paper
Electronic Resource
English
Wet Oxidation of AlGaAs vs. AlAs: A Little Gallium is Good
British Library Conference Proceedings | 1996
|AlAs/AlGaAs distributed Bragg reflectors for vertical-cavity surface-emitting lasers [3211-14]
British Library Conference Proceedings | 1997
|Reduced Threshold Bottom Emitting Vertical Cavity Lasers by AlAs Oxidation
British Library Conference Proceedings | 1995
|Good riding on the little big MAN coach
Automotive engineering | 1981
|