Some results on MBE HgCdTe for the applications of IRFPAs are described. The p-type doing with As/sub 4/ was studied in terms of sticking coefficient, thermal activation as well as As diffusion. Various kinds of surface defects and their relations to growth condition were classified. Results on twin-free CdTe (211) composite substrates on Si and FPA applications are presented.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Research activities in MBE HgCdTe at SITP


    Contributors:
    He, L. (author) / Chen, L. (author) / Wu, J. (author) / Wu, Y. (author) / Wang, Y.Z. (author) / Xu, F.F. (author) / Yu, M.F. (author) / Qiao, Y.M. (author) / Yang, J.R. (author) / Li, Y.J. (author)


    Publication date :

    2004-01-01


    Size :

    168148 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    HgCdTe Infrared Detectors

    Norton, P. / Electrochemical Society | British Library Conference Proceedings | 1999


    HgCdTe photodiode performance degradation

    Bovina, L. A. / Boltar, K. O. / Stafeev, V. I. et al. | British Library Conference Proceedings | 1999


    The HgCdTe electron avalanche photodiode

    Beck, J.D. / Wan, C.-F. / Kinch, M.A. et al. | IEEE | 2003


    Status Of HgCdTe Detector Technology

    Reine, M B. | SPIE | 1983


    Resonant Cavity Enhanced HgCdTe Detectors

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005