Dynamics of optical absorption saturation in Be-doped standard-temperature MBE grown GaAs/AlAs MQW was studied by using 200fs laser pulses. Response time becomes less than 1ps at doping [Be] > 1 /spl times/ 10/sup 19/ cm/sup -3/, which is in marked contrast to InGaAs/InAlAs MQW.


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    Title :

    Optical nonlinearity and response time in beryllium-doped standard temperature MBE grown GaAs/AlAs MQW


    Contributors:
    Okuno, T. (author) / Masumoto, Y. (author) / Sakuma, Y. (author) / Hayasaki, Y. (author) / Kadono, S. (author) / Okamoto, H. (author)


    Publication date :

    2001-01-01


    Size :

    116567 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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