For organic light-emitting diodes, the higher work-function of heavily doped p-type silicon makes it a potentially more efficient hole-injecting anode than indium-tin oxide. However, it was determined from a systematic set of experiments that while hole injection was indeed achieved, the efficiency was not particularly high and light emission was consistently absent. A most likely explanation was the diffusion of radiation-quenching, conventional dopants of silicon into the organic emission layer. Diffusion was partially blocked by capping silicon with a thin inorganic oxide layer.


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    Title :

    Investigation of heavily doped silicon as an anode material for top-emitting organic light-emitting diode


    Contributors:
    Ka Wah Chan, (author) / Chi Hoo Wan, (author) / Hoi Sing Kwok, (author) / Man Wong, (author)


    Publication date :

    2003-01-01


    Size :

    238386 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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