Summary form only given. We describe a mid-infrared laser diode active region based on type-II GaInSb/InAs quantum wells. The structure is designed for efficient electrical injection from the barriers. The band structure has been engineered to minimize the deleterious effects prevalent in mid-infrared materials, such as Auger recombination and intersubband absorption.


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    Title :

    Mid-infrared laser diode active region based on type-II broken gap quantum wells


    Contributors:
    Olesberg, J.T. (author) / Day, P.S. (author) / Shaw, E.M. (author) / Magarrell, D.J. (author) / Zhang, L. (author) / Anson, S.A. (author) / Hasenberg, T.C. (author) / Boggess, T.F. (author) / Grein, C.H. (author)


    Publication date :

    1999-01-01


    Size :

    145224 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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