We have described a back-illuminated photodetector with an 0.62 A/W responsivity, a typical dark current of 3 nA at -5 V bias, a failure rate of less than 1 FIT at 40/spl deg/C, and a bandwidth (into a 50 ohm load) as high as 39 GHz. By inserting a tunnelling element into an otherwise standard equivalent circuit model, we have shown that this model is capable of self-consistently fitting photodiode S-parameter data and explaining a broad range of behavior including low frequency tailing. The physically-based equivalent circuit model and parameter extraction allows an understanding of detector performance and improved control of device processing. The detector is suitable for operation in 40 Gb/s receivers.


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    Title :

    Equivalent circuit modelling of p-i-n photodiodes for 40 Gb/s receivers


    Contributors:
    Steinbach, A.H. (author) / Penn, I. (author) / Chokshi, N. (author) / Martin, D. (author) / Slomkowski, K. (author) / Baun, W. (author) / Agrawal, N. (author) / Ben-Michael, R. (author) / Itzler, M.A. (author)


    Publication date :

    2002-01-01


    Size :

    139684 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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