We have described a back-illuminated photodetector with an 0.62 A/W responsivity, a typical dark current of 3 nA at -5 V bias, a failure rate of less than 1 FIT at 40/spl deg/C, and a bandwidth (into a 50 ohm load) as high as 39 GHz. By inserting a tunnelling element into an otherwise standard equivalent circuit model, we have shown that this model is capable of self-consistently fitting photodiode S-parameter data and explaining a broad range of behavior including low frequency tailing. The physically-based equivalent circuit model and parameter extraction allows an understanding of detector performance and improved control of device processing. The detector is suitable for operation in 40 Gb/s receivers.
Equivalent circuit modelling of p-i-n photodiodes for 40 Gb/s receivers
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 486-487 vol.2
2002-01-01
139684 byte
Conference paper
Electronic Resource
English
WP2 Equivalent Circuit Modelling of p-i-n Photodiodes for 40 Gb/s Receivers
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