We have systematically studied both the spontaneous and stimulated emission (SE) properties of InGaN-based lasing mediums using a variety of linear and nonlinear optical techniques. Through this detailed study we present strong evidence that emission characteristics of near-UV-blue laser diodes are strongly dependent on localized carrier recombination, believed to be due to inhomogeneous potential fluctuations. We observed a large Stokes shift of photoluminescence (PL) with respect to absorption edge obtained from PL excitation spectra, a large blueshift of spontaneous emission with increasing excitation density, and a redshift in emission energy with time in time-resolved PL spectra.


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    Title :

    Critical issues of localization in the development of InGaN/GaN laser diodes


    Contributors:
    Bidnyk, S. (author) / Yong-Hoon Cho, (author) / Schmidt, C.T.J. (author) / Gainer, A.G.H. (author) / Song, A.J.J. (author) / Keller, S. (author) / Mishra, U.K. (author) / DenBaars, S.P. (author) / Jhe, W. (author)


    Publication date :

    1999-01-01


    Size :

    134589 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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