We have systematically studied both the spontaneous and stimulated emission (SE) properties of InGaN-based lasing mediums using a variety of linear and nonlinear optical techniques. Through this detailed study we present strong evidence that emission characteristics of near-UV-blue laser diodes are strongly dependent on localized carrier recombination, believed to be due to inhomogeneous potential fluctuations. We observed a large Stokes shift of photoluminescence (PL) with respect to absorption edge obtained from PL excitation spectra, a large blueshift of spontaneous emission with increasing excitation density, and a redshift in emission energy with time in time-resolved PL spectra.
Critical issues of localization in the development of InGaN/GaN laser diodes
1999-01-01
134589 byte
Conference paper
Electronic Resource
English
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