We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.
Absorption of intense terahertz radiation in InAs/AlSb heterojunction
2002-01-01
199696 byte
Conference paper
Electronic Resource
English
Absorption of Intense Terahertz Radiation in InAs/AlSb Heterojunctions
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