We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.


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    Title :

    Absorption of intense terahertz radiation in InAs/AlSb heterojunction


    Contributors:
    Cao, J.C. (author) / Lei, X.L. (author)


    Publication date :

    2002-01-01


    Size :

    199696 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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