Using a two-dimensional simulator, current collapse effect is simulated in GaN HEMTs. Dynamic picture of trapping of hot electron under gate pulse is discussed. The trapped charge may accumulate under punch-off gate voltage at gate edge drain side due to the large electric field strain. Self-heating effect is a consequence of the current collapse.


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    Title :

    Current Collapse Simulation of GaN HEMTs


    Contributors:
    Hu, W.D. (author) / Chen, X.S. (author) / Quan, Z.J. (author) / Xia, C.S. (author) / Lu, W. (author)


    Publication date :

    2006-09-01


    Size :

    1265756 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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