AbstractCharge-exchange processes between interstellar H-/O-atoms and protons of the bulk of the interstellar plasma flow downstream of the outer bowshock in the heliospheric interface induce secondary ions leading to non-relaxated velocity distribution functions. The relaxation of these freshly induced ions towards an equilibrium distribution occurs due to Coulomb interactions and wave–particle interactions with the background turbulence. Since Coulomb interactions are of low relevance, we study here in detail the effect of wave–particle interactions. To find the turbulence levels in the interface we consider the MHD-wave transformation at the outer shock surface between the interface and the local interstellar plasma. The turbulence in the outer interface region is shown to be dominated by incompressible Alfvén waves both for cases of quasiparallel and quasiperpendicular shocks. Also we show that waves propagating towards the shock are more intensive than those propagating away from it. The level of Alfvén turbulence in the interface is estimated using the recent data on local interstellar turbulence deduced from observations of interstellar scintillations of distant radiosources. Two proton relaxation processes are considered: quasilinear resonant interactions with Alfvén waves and non-linear self-induced wave–particle scattering. The corresponding diffusion coefficients are estimated, and typical time periods for protons and oxygen ions relaxation are shown to be of the same order of magnitude as H-/O-atoms passage time over the extent of the interface. This indicates that perturbed ion distribution functions must be expected there.


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    Title :

    Ion relaxation processes in the heliospheric interface: how perturbed are ion distribution functions?


    Contributors:
    Chashei, I.V. (author) / Fahr, H.J. (author)

    Published in:

    Advances in Space Research ; 35 , 12 ; 2078-2083


    Publication date :

    2005-01-14


    Size :

    6 pages




    Type of media :

    Article (Journal)


    Type of material :

    Electronic Resource


    Language :

    English





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