Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode


    Contributors:
    Wang, X. D. (author) / Hu, W. D. (author) / Chen, X. S. (author) / Lu, W. (author) / Tang, H. J. (author) / Li, T. (author) / Gong, H. M. (author)

    Published in:

    OPTICAL AND QUANTUM ELECTRONICS ; 40 , 14-15 ; 1261-1266


    Publication date :

    2008-01-01


    Size :

    6 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English


    Classification :

    DDC:    537.5



    Dark current reduction in fused InGaAs/Si avalanche photodiode

    Kang, Y. / Mages, P. / Pauchard, A. et al. | IEEE | 2001


    ThN4 Dark Current Reduction in Fused InGaAs/Si Avalanche Photodiode

    IEEE | British Library Conference Proceedings | 2001


    Silicon p-i-n photodiode with low values of dark current [3890-19]

    Ascheulov, A. A. / Godovanyuk, V. M. / Dobrovolsky, Y. G. et al. | British Library Conference Proceedings | 1999


    Modeling of dark characteristics for long-wavelength HgCdTe photodiode

    Quan, Z. J. / Chen, X. S. / Hu, W. D. et al. | British Library Online Contents | 2006


    Analytical calculation of dark voltage-current characteristics of double-layer heterojunction photodiode [4340-13]

    Sokolovsky, B. S. / Pysarevsky, V. K. / Russian Federation RD & P Centre ORION | British Library Conference Proceedings | 2000